Bonding and Thermal Fracture of Silicon Nitride / Stainless Steal (SUS316)

Spontaneous direct bonding of thick silicon nitride

Wafers with 1 μm LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical–mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si–Si hydrophilic bonding. A mechanis...

Interface structure and atomic bonding characteristics in silicon nitride ceramics.

Direct atomic resolution images have been obtained that illustrate how a range of rare-earth atoms bond to the interface between the intergranular phase and the matrix grains in an advanced silicon nitride ceramic. It has been found that each rare-earth atom bonds to the interface at a different location, depending on atom size, electronic configuration, and the presence of oxygen at the interf...

Effects of the Amorphous Oxide Intergranular Layer Structure and Bonding on the Fracture Toughness of a High Purity Silicon Nitride

The microstructural evolution and structural characteristics and transitions in the thin grainboundary oxide films in a silicon nitride ceramic, specifically between two adjacent grains and not the triple junctions, are investigated to find their effect on the macroscopic fracture properties. It is found that by heat treating a model Si3N4-2wt% Y2O3 ceramic for ~200 hr at 1400°C in air, the fra...

Thermal conductivity and photoluminescence of light-emitting silicon nitride films

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Compressibility and thermal expansion of cubic silicon nitride